Atomistic Simulations and Statistical Measurements to investigate Nano-structured MOS Device Degadation

 
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• 4-08.156V
  

  Domdey, Andreas First principles study of the degradation of silicon-dioxide gate dielectrics

  In Tagungsband "Proc. 9th Workshop on Semiconductor Advances for Future Electronics", 2006, Nr. 9 SAFE2006

• 4-08.145V
  

  Kristian Hafkemeyer, Andreas Domdey, Wolfgang H. Krautschneider Design of a process-parameter independent test-structure for reliability tests

  In Tagungsband "ProRISC2006 Workshop", Veldhoven (The Netherlands), 23.-24. November 2006

Stichwörter

• 130 nm CMOS technology
• atomistic simulation
• degradation
• stress test