Organic field effect transistors
Organic field effect transistors were fabricated and characterized. Based on experimental results, these devices were optimized. Different process sequences were used for fabrication of the organic MOS transistors. It could be shown that all polymeric MOS transistors are feasible with good performance both in the active and turn-off region. A physical model was developed for analytical simulations of the I-V-behaviour. Taking the differential drain-source resistance, the gate voltage dependence of the mobility and the depletion effect into consideration. The model was established in amanner, that it can be implemented into a circuit simulator. Furthermore, the potential of Polymer MOS transistors for sensor applications is investigated.
Publikationen - 4-08.106V
Schliewe, Yildrim, Bauhofer, Krautschneider Deposition and characterization of polymeric layers for organic electronicsIn Tagungsband "Proc. Polytronic, Montreux, Switzerland", 2003 - 4-08.107V
R.R. Schliewe, F.A. Yildrim, W. Bauhofer, W. Krautschneider Electrode structures for characterization of organic materials and for application in organic electronics In Tagungsband "Proc. 6th Annual Workshop on Future Electronics SAFE, Eindhoven, The Netherlands", 2003 - 4-08.122V
F.A. Yildirim and R.R. Schliewe and W. Bauhofer and W. Krautschneider Investigation of materials and electrode strucutres for organic field effect transistorsIn Tagungsband "Technologies for Polymer Electronics, TPE04", 2004, Int. Symposium Technologies for Polymer Electronics, TPE04, Rudolstadt, 28-30 September 2004 - 4-08.168V
R.R. Schliewe, F.A. Yilderim, W. von Emden, R. Witte, W. Bauhofer, W. Krautschneider Static model for organic field-effect transistors including both gate-voltage-dependent mobility and depletion effect Artikel in"Applied physics letters", vol. 88, p. 233514-1-3, 2006
- 4-08.169V
R.M. Meixner, H. Goebel, F.A. Yilderim, W. Bauhofer, W. Krautschneider Wavelength-selective organic field-effect phototransistors based on dye-doped poly-3 hexylthiophene Artikel in " Applied physics letters", vol. 89, p. 092110-1-3, 2006
- 4-08.170V
F.A. Yilderim, R. Meixner, R.R. Schliewe, W. Bauhofer, H. Goebel, W. Krautschneider Polymer Gate Dielectrics for High Performance Organic field-effect Transistors Artikel in "Mater. Res. Soc. Symp. Proc. ", vol. 937, 2006
- 4-08.171V
R. Meixner, R. Wille, P. Schertling, H. Goebel, H. Harde, K.-H. Steglich, F.A. Yilderim, W. Bauhofer, W. Krautschneider Bottom Gate Organic Field-effect Transistors made by laser structuring Artikel in " ELSEVIER Organic Electronics", vol. 7, p. 586-591, 2006
Stichwörter - organic MOS
- organic electronic
- polymer gate dielectrics
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